IGBTs are the key components in energy conversion and transmission systems. Their use in power electronics significantly enhances the efficiency and quality of electrical energy, making them highly energy-efficient and environmentally friendly. Traditionally, the IGBT market has been dominated by European, American, and Japanese multinational corporations. However, the rise of new energy vehicles has created a unique opportunity for domestic IGBT manufacturers to gain a foothold in this competitive landscape.
According to data from 2016, global electric vehicle sales reached 2 million units, with an estimated $900 million spent on IGBTs. On average, each car used about $450 worth of IGBTs, making it one of the most expensive components after the battery. Among these, hybrid and plug-in hybrid vehicles accounted for around 770,000 units, with an average IGBT cost of $300 per vehicle. Pure electric vehicles, totaling approximately 1.23 million units, had an average IGBT cost of $540, while high-power electric buses could require over $1,000 worth of IGBTs per unit.
Zhang Kefeng, general manager of Hangzhou Silan Microelectronics, noted that the rapid development of new energy vehicles has provided both domestic and international automakers with a level playing field. With strong government support in terms of policy and resources, Chinese automotive companies have gained a competitive edge. The new regulations requiring local brands to reach double-digit percentages of new energy vehicle sales by 2018 have further boosted the demand for domestically produced IGBTs.
Yang Jiye, R&D director at Huahong Hongli, emphasized that new energy vehicles are not only crucial for energy conservation and environmental protection but also a key driver for the transformation of China’s auto industry. As a core component in the power system of these vehicles, IGBTs are expected to see significant growth. According to third-party research, the semiconductor content in pure electric vehicles is around $673, a 127% increase compared to traditional automotive semiconductors, with most of the increase coming from power devices.
The State Council's "Energy Conservation and New Energy Vehicle Industry Development Plan" aims to reach 2 million annual production units of pure electric and plug-in hybrid vehicles by 2020. This would require about 1 million 8-inch IGBT wafers annually. With the development of new energy vehicles and their supporting infrastructure, China's IGBT market is expected to reach nearly 20 billion yuan by 2020. Despite this promising outlook, the domestic IGBT industry still faces challenges, including an incomplete industrial chain and a technology gap compared to global leaders.
Yang Jiye pointed out that China's power semiconductor industry still lags behind international IDM vendors in equipment investment, device design, and process technology. The supply chain is also underdeveloped. Domestic IGBTs lack brand recognition due to limited time in the market, and the localization of IGBT technology started late, with unclear market prospects. Only a few established manufacturers have managed to capture a portion of the market.
At the manufacturing level, Huahong HongLi has achieved technical parameters comparable to leading international companies with its FieldStop IGBT technology. However, full improvement of domestic IGBT capabilities requires collaboration across the entire industry chain.
Currently, the most advanced IGBT production lines are 8-inch and 12-inch. Infineon leads with mass production on 12-inch lines, while domestic manufacturers like Zhuzhou China Automotive, Shanghai Huahong Hongli, and Silan Microelectronics have achieved mass production on 8-inch lines. These companies have invested heavily in specialized equipment such as ion implanters, laser annealers, and thin-film Taiko machines.
On December 18, 2017, Hangzhou Silan Microelectronics and Xiamen Semiconductor Investment Group signed an agreement to build two 12-inch integrated circuit manufacturing lines in Xiamen, focusing on MEMS and power devices. These lines are expected to be operational within 2-3 years, driving continuous improvements in IGBT technology.
In addition to the technological gap, core IGBT patents and high-end talent are largely controlled by international firms like Infineon and Mitsubishi. Zhang Kefeng highlighted that high-level R&D and product designers are scarce in China. Domestic chip manufacturers have developed their expertise through years of trial and error. To address the talent shortage, universities and companies need to invest in training programs, while also offering competitive compensation or policies to attract top international talent.
Patent acquisition is another challenge. While some innovation is possible through internal R&D, purchasing foreign IGBT technology is costly and complex.
Despite the challenges—late start, lack of end-user demand, talent shortages, and weak brand recognition—the future of domestic IGBTs looks promising. With supportive policies and growing markets in new energy vehicles, high-speed rail, and wind power, the “spring†for Chinese IGBTs is just around the corner.
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