IGBT, or Insulated Gate Bipolar Transistor, is a crucial component in energy conversion and transmission systems. Utilizing IGBTs in power conversion not only enhances the efficiency of electricity use but also improves its quality, making it a highly energy-efficient and environmentally friendly solution. However, the traditional IGBT market has long been dominated by international giants from Europe, the United States, and Japan. The rise of new energy vehicles has created a significant opportunity for domestic IGBT manufacturers to gain ground.
According to industry data, global electric vehicle sales reached 2 million units in 2016, consuming approximately $900 million worth of IGBTs. On average, each vehicle cost around $450 in IGBT components, making it one of the most expensive parts after the battery. Hybrid and PHEV models used about $300 worth of IGBTs per unit, while pure electric vehicles required an average of $540. High-power electric buses could even exceed $1,000 in IGBT costs.
Zhang Kefeng, General Manager of Hangzhou Silan Microelectronics, noted that the rapid development of new energy vehicles has provided both domestic and international car companies with a level playing field. With strong government support in policies and resources, Chinese automakers have gained a competitive edge. New regulations require local brands to achieve double-digit sales of new energy vehicles by 2018, creating a favorable environment for domestic IGBT suppliers.
Yang Jiye, R&D Director at Huahong Hongli, emphasized that new energy vehicles are essential for energy conservation and environmental protection, as well as a key driver for the transformation of China's auto industry. As a core component in power systems, IGBTs are poised for significant growth. According to third-party research, the semiconductor content in pure electric vehicles reached $673, a 127% increase compared to $297 in traditional vehicles, with most of the increase coming from power devices.
The State Council’s "Energy Conservation and New Energy Vehicle Industry Development Plan" aims to reach 2 million annual production capacity for pure electric and plug-in hybrid vehicles by 2020, requiring 1 million 8-inch IGBT wafers annually. With the growth of new energy vehicles and supporting infrastructure, IGBT sales in China are expected to reach nearly 20 billion yuan by 2020, highlighting the immense opportunities for domestic IGBT manufacturers.
Despite this progress, the domestic IGBT industry still faces challenges. The industrial chain is not yet fully developed, and technological gaps with global leaders remain. Yang Jiye pointed out that equipment investment, device design, and process technology need improvement. Additionally, the supply chain is not yet mature, and domestic IGBTs lack brand recognition due to limited time in the market.
Many domestic IGBT manufacturers started later, and early market applications were unclear, reducing the incentive for localization. Only a few established companies had captured the market. While some domestic firms have achieved technical parameters comparable to international leaders, full-scale improvement requires collaboration across the entire industry chain.
Currently, the most advanced IGBT production lines are 8-inch and 12-inch. Infineon leads in 12-inch mass production, while several Chinese companies have achieved mass production on 8-inch lines. Companies like Zhuzhou China Automotive, Shanghai Huahong Hongli, and Silan Microelectronics have invested heavily in new 8-inch lines, acquiring specialized equipment such as ion implanters and laser annealers.
On December 18, 2017, Hangzhou Silan Microelectronics and Xiamen Semiconductor Investment Group signed an agreement to build two 12-inch IC manufacturing lines in Xiamen, focusing on MEMS and power devices. These lines are expected to be completed within 2-3 years, driving continuous improvements in IGBT technology.
In addition to technical gaps, core patents and high-end talent in IGBTs are largely controlled by international players like Infineon and Mitsubishi. Zhang Kefeng highlighted the scarcity of high-level R&D personnel and the need for training and attracting top talent through competitive compensation or policy incentives.
While domestic IGBTs face challenges such as late development, limited end-user demand, and weak brand recognition, recent supportive policies and emerging markets like new energy vehicles, high-speed rail, and wind power suggest a promising future. The “spring†for domestic IGBTs is on the horizon.
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